VT1045CBP
www.vishay.com
Vishay General Semiconductor
Revision: 22-May-12
1
Document Number: 89363
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF
= 0.34 V at I
F
= 2.5 A
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder dip 275 °C max.
10 s, per JESD 22-B106
?TJ
200 °C max. in solar bypass mode application
? Material categorization: For
definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
45 V
IFSM
100 A
VF at IF
= 5.0 A 0.41 V
TOP
max. (AC mode) 150 °C
TJ
max. (DC forw
ard current) 200 °C
TO-220AB
VT1045CBP
1
32
PIN 1
PIN 2
CASE
PIN 3
TMBS?
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT1045CBP UNIT
Maximum repetitive peak reverse voltage VRRM
45 V
Maximum average forward rectified current (fig. 1)
per device
IF(AV)
(1)
per diode 5.0
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
100 A
Operating junction and storage temperature range (AC mode) TOP, TSTG
- 40 to + 150 °C
Junction temperature in DC forward current
without reverse bias, t ?
1 h
TJ
(2)
?
200 °C
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